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BTB1412J3

Cystech Electonics
Part Number BTB1412J3
Manufacturer Cystech Electonics
Description Low Vcesat PNP Epitaxial Planar Transistor
Published Jun 15, 2009
Detailed Description www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2004.07.02 Pa...
Datasheet PDF File BTB1412J3 PDF File

BTB1412J3
BTB1412J3

Overview
www.
DataSheet4U.
com CYStech Electronics Corp.
Spec.
No.
: C816J3 Issued Date : 2003.
05.
15 Revised Date : 2004.
07.
02 Page No.
: 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTB1412J3 Features • Low VCE(sat), VCE(sat)=-0.
6 V (typical), at IC / IB = -4A / -0.
1A • Excellent DC current gain characteristics • Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1.
Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj T...


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