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AP4959GM

Part Number	AP4959GM
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Jun 17, 2009
Detailed Description	www.DataSheet4U.com AP4959GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower Turn-on Voltage ▼ Simple...
Datasheet	AP4959GM PDF File

Overview

www.
DataSheet4U.
com AP4959GM Pb Free Plating Product Advanced Power Electronics Corp.
▼ Lower Turn-on Voltage ▼ Simple Drive Requirement ▼ Dual P MOSFET Package SO-8 S1 S2 G1 D1 D1 D2 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 -16V 65mΩ -4.
7A ID Description TThe Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -16 ±8 -4.
7 -3.
8 -20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.
5 Unit ℃/W Data and specifications subject to change without notice 200218051 www.
DataSheet4U.
com AP4959GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.
-16 -0.
3 - Typ.
-0.
01 10 13 2 4 11 19 38 22 920 175 150 Max.
Units 65 75 100 -1.
0 -1 -25 ±100 20 1780 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.
5V, ID=-4A VGS=-2.
5V, ID=-3A VGS=-1.
8V, ID=-1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-16V, VGS=0V VDS=-12V, VGS=0V VGS=±8V ID=-4A VDS=-12V VGS=-4.
5V VDS=-10V ID=-1A RG=3.
3Ω,VGS=-5V RD=10Ω VGS=0V VDS=-15V f=1.
0MHz Gate-Source Leakage Total Gate Charge 2 ...

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