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IRLU8203PBF

Part Number	IRLU8203PBF
Manufacturer	International Rectifier
Description	SMPS MOSFET
Published	Jun 19, 2009
Detailed Description	www.DataSheet4U.com PD - 95095A SMPS MOSFET IRLR8203PbF IRLU8203PbF HEXFET® Power MOSFET Applications l High Frequen...
Datasheet	IRLU8203PBF PDF File

Overview

www.
DataSheet4U.
com PD - 95095A SMPS MOSFET IRLR8203PbF IRLU8203PbF HEXFET® Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.
5V VGS l Fully Characterized Avalanche Voltage and Current l VDSS 30V RDS(on) max 6.
8mΩ ID 110A D-Pak IRLR8203PbF I-Pak IRLU8203PbF Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max.
30 ± 20 110 76 120 140 69 0.
92 -55 to + 175 Units V V A W W W/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ.
––– ––– ––– Max.
1.
09 50 110 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 10 www.
irf.
com 1 12/06/04 www.
DataSheet4U.
com IRLR/U8203PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min.
Typ.
Max.
Units Conditions 30 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
027 ––– V/°C Reference to 25°C, ID = 1mA ––– 5.
6 6.
8 VGS = 10V, ID = 15A mΩ Static Drain-to-Source On-Resistance ––– 7.
1 9.
0 VGS = 4.
5V, ID = 12A Gate Threshold Voltage 1.
0 ––– 3.
0 V VDS = VGS, ID = 250µA ––– ––– 20 VDS = 24V, VGS = 0V µA Drain-to-Source Leakage Current ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V nA Gate-to-Source Reverse Leakage –––...

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IRLU8203PBF SMPS MOSFET - International Rectifier

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