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IRLR8743PBF

Part Number	IRLR8743PBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Jun 19, 2009
Detailed Description	Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC C...
Datasheet	IRLR8743PBF PDF File

Overview

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case gÃRθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient VDSS 30V PD - 96123 IRLR8743PbF IRLU8743PbF HEXFET® Power MOSFET RDS(on) max Qg 3.
1m: 39nC D S G S D G D-Pak I-Pak IRLR8743PbF IRLU8743PbF G Gate D Drain S Source Max.
30 ± 20 f160 f113 640 135 68 0.
90 -55 to + 175 Units V A W W/°C °C 300 (1.
6mm from case) Typ.
––– ––– ––– Max.
1.
11 50 110 Units °C/W Notes through are on page 11 www.
irf.
com 1 08/15/07 IRLR/U8743PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA Breakdown Voltage Temp.
Coefficient ––– 20 ––– mV/°C Reference to 25°C, ID = 1mA eStatic Drain-to-Source On-Resistance ––– e––– 2.
4 3.
0 3.
1 3.
9 mΩ VGS = 10V, ID = 25A VGS = 4.
5V, ID = 20A Gate Threshold Voltage 1.
35 1.
9 2.
35 V VDS = VGS, ID = 100µA Gate Threshold Voltage Coefficient ––– -6.
4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 ––– ––– 150 µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––...

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IRLR8743PBF Power MOSFET - International Rectifier

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