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IRLU8729PBF

International Rectifier
Part Number IRLU8729PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 19, 2009
Detailed Description Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC C...
Datasheet PDF File IRLU8729PBF PDF File

IRLU8729PBF
IRLU8729PBF

Overview
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ™ Continuous Drain Current, VGS @ 10V Pulsed Drain Current g Maximum Power Dissipation g Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC RθJA gà Junction-to-Case Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient VDSS 30V PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET® Power MOSFET RDS(on) max Qg 8.
9mΩ 10nC D S S D G G D-Pak I-Pak IRLR8729PbF IRLU8729PbF G Gate D Drain S Source Max.
30 ± 20 58f 41f 260 55 27 0.
37 -55 to + 175 300 (1.
6mm from case) Units V A W W/°C °C Typ.
––– ––– ––– Max.
2.
73 50 110 Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes  through … are on page 11 www.
irf.
com 1 11/23/09 IRLR/U8729PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA Breakdown Voltage Temp.
Coefficient ––– Static Drain-to-Source On-Resistance ––– ––– 21 6.
0 8.
9 ––– mV/°C Reference to 25°C, ID = 1mA e 8.
9 mΩ VGS = 10V, ID = 25A e 11.
9 VGS = 4.
5V, ID = 20A Gate Threshold Voltage 1.
35 1.
8 2.
35 V VDS = VGS, ID = 25µA Gate Threshold Voltage Coefficient ––– -6.
2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 µA VDS = 24V, VGS = 0V ...


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