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KI4532ADY

KEXIN
Part Number KI4532ADY
Manufacturer KEXIN
Description MOSFET
Published Jun 20, 2009
Detailed Description www.DataSheet4U.com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532ADY Transistors IC PIN Configuration Absolute ...
Datasheet PDF File KI4532ADY PDF File

KI4532ADY
KI4532ADY

Overview
www.
DataSheet4U.
com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532ADY Transistors IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board.
TJ, Tstg IDM IS PD 1.
7 2 1.
3 0.
94 1.
13 0.
73 Symbol VDS VGS ID 4.
9 3.
9 N-Channel 10 sec Steady State 30 20 3.
7 2.
9 20 -1.
7 2 1.
3 -55 to 150 -1 1.
2 0.
76 -3.
9 -3.
1 P-Channel 10 sec Steady State -30 20 -3 -2.
4 V V A A A A W W Unit Thermal Resistance Ratings TA = 25 Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot RthJA RthJc 55 90 40 Max 62.
5 110 50 P-Channel Typ 54 87 34 Max 62.
5 105 45 /W Unit Steady State Steady State *Surface Mounted on 1" X 1" FR4 Board.
www.
kexin.
com.
cn 1 www.
DataSheet4U.
com SMD Type KI4532ADY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 30V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 VDS = -30V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -10 V, ID = -3.
9A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 10V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg = 6 IF = 1.
7 A, di/dt = 100 A/ IF = -1.
7 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 Min 1 -1 Transistors IC Typ Max Unit V 100 100 1 -1 5 -5 A A 0.
044 0.
053 0.
...


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