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IRF8313PBF

International Rectifier
Part Number IRF8313PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Jun 22, 2009
Detailed Description www.DataSheet4U.com PD - 97145 IRF8313PbF Applications l l HEXFET® Power MOSFET Load Switch DC/DC Conversion VDSS ...
Datasheet PDF File IRF8313PBF PDF File

IRF8313PBF
IRF8313PBF

Overview
www.
DataSheet4U.
com PD - 97145 IRF8313PbF Applications l l HEXFET® Power MOSFET Load Switch DC/DC Conversion VDSS RDS(on) max Qg 30V 15.
5m:@VGS = 10V 6.
0nC Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.
Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) Description S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 SO-8 The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
30 ±20 9.
7 8.
1 81 2.
0 1.
3 0.
016 -55 to + 175 Units V c A Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range W W/°C °C Thermal Resistance RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Parameter Typ.
––– ––– Max.
42 62.
5 Units °C/W Notes  through … are on page 9 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
www.
irf.
com 1 11/5/08 www.
DataSheet4U.
com IRF8313PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Thre...


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