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MD2103DFP

STMicroelectronics
Part Number MD2103DFP
Manufacturer STMicroelectronics
Description High voltage NPN power transistor
Published Jun 30, 2009
Detailed Description www.DataSheet4U.com MD2103DFP High voltage NPN power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ ...
Datasheet PDF File MD2103DFP PDF File

MD2103DFP
MD2103DFP

Overview
www.
DataSheet4U.
com MD2103DFP High voltage NPN power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrated free wheeling diode TO-220FP 1 2 3 Applications ■ Horizontal deflection output for TV Figure 1.
Internal schematic diagram Description The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure.
The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage.
RBE=65Ω (typ) Table 1.
Device summary Marking MD2103DFP Package TO-220FP Packing Tube Order code MD2103DFP May 2008 Rev 1 1/9 www.
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com 9 www.
DataSheet4U.
com Electrical ratings MD2103DFP 1 Electrical ratings Table 2.
Symbol VCES VCEO VEBO IC ICM IB Ptot VINS Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE =0) Collector-emitter voltage (IB =0) Emitter-base voltage (IC =0) Collector current Collector peak current (tP < 5ms) Base current Total dissipation at Tc ≤25°C Insulation withstand voltage (RMS) from all three leads to external heatsink Storage temperature Max.
operating junction temperature Value 1500 700 7 6 9 3 38 1500 -65 to 150 150 Unit V V V A A A W V °C °C Table 3.
Symbol Thermal data Parameter Value 3.
3 Unit °C/W Rthj-case Thermal resistance junction-case max 2/9 www.
DataSheet4U.
com MD2103DFP Electrical characteristics 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4.
Symbol ICES IEBO V(BR)EBO VCE(sat) (1) Electrical characteristics Parameter Collector cut-off current (VBE =0) Emitter cut-off current (IC =0) Emitter-base brakdown voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage Test con...


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