DatasheetsPDF.com

BLF6G20LS-110

NXP Semiconductors
Part Number BLF6G20LS-110
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
Published Jul 1, 2009
Detailed Description www.DataSheet4U.com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 01 — 28 January 2008 Preliminary data sheet ...
Datasheet PDF File BLF6G20LS-110 PDF File

BLF6G20LS-110
BLF6G20LS-110

Overview
www.
DataSheet4U.
com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev.
01 — 28 January 2008 Preliminary data sheet 1.
Product profile 1.
1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 19 ηD (%) 31 IMD3 (dBc) −37[1] ACPR (dBc) −40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efficiency = 31 % N IMD3 = −37 dBc N ACPR = −40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) www.
DataSheet4U.
com NXP Semiconductors BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor 1.
3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLF6G20-110 (SOT502A) 1 3 2 2 3 sym112 1 BLF6G20LS-110 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange.
3.
Ordering information Table 3.
Ordering information Package Name BLF6G20-110 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)