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SSM3J108TU

Part Number	SSM3J108TU
Manufacturer	Toshiba Semiconductor
Description	Field Effect Transistor Silicon P-Channel MOS Type
Published	Jul 7, 2009
Detailed Description	SSM3J108TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switch...
Datasheet	SSM3J108TU PDF File

Overview

SSM3J108TU www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications • • 1.
8V drive Low on-resistance: Ron = 363mΩ (max) (@VGS = −1.
8 V) Ron = 230mΩ (max) (@VGS = −2.
5 V) Ron = 158mΩ (max) (@VGS = −4.
0 V) 2.
0±0.
1 0.
65±0.
05 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3 -0.
05 3 0.
166±0.
05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −20 ±8 −1.
8 −3.
6 800 500 150 −55~150 Unit V V 1 2 mW °C °C 0.
7±0.
05 A Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ra...

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SSM3J108TU Field Effect Transistor Silicon P-Channel MOS Type - Toshiba Semiconductor

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