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SSM3J109TU

Toshiba Semiconductor
Part Number SSM3J109TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 7, 2009
Detailed Description SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU ○ Power Management Switch Application...
Datasheet PDF File SSM3J109TU PDF File

SSM3J109TU
SSM3J109TU

Overview
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.
8 V drive • Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.
8 V) Ron = 172 mΩ (max) (@VGS = -2.
5 V) Ron = 130 mΩ (max) (@VGS = -4.
0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2 A -4 Drain power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board (25.
4 mm × 25.
4 mm × 0.
8 t, Cu Pad: 645 mm2) Note 2: Mounted on an FR4 board (25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Unit: mm 2.
1±0.
1 1.
7±0.
1 0.
3-+00.
.
015 1 2 3 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 UFM 1.
Gate 2.
Source 3.
Drain JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.
6 mg (typ.
) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Drain-source forward voltage Note 3: Pulse test Symbol Test Condition Min Typ.
Max Unit V (BR) DSS ID = -1...


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