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SSM3J110TU

Toshiba Semiconductor
Part Number SSM3J110TU
Manufacturer Toshiba Semiconductor
Description Field-Effect Transistor Silicon P-Channel MOS Type
Published Jul 7, 2009
Detailed Description SSM3J110TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switch...
Datasheet PDF File SSM3J110TU PDF File

SSM3J110TU
SSM3J110TU

Overview
SSM3J110TU www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J110TU High Speed Switching Applications • • 1.
8V drive Low on-resistance: Ron = 240mΩ (max) (@VGS = −1.
8 V) Ron = 145mΩ (max) (@VGS = −2.
5 V) Ron = 94mΩ (max) (@VGS = −4.
0 V) 0.
65±0.
05 2.
0±0.
1 1 2 3 0.
166±0.
05 2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3 -0.
05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −12 ±8 −2.
3 −4.
6 800 500 150 −55~150 Unit V V mW °C °C 0.
7±0.
05 A Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on ceramic board.
(25.
4 mm × 25.
4 mm × 0.
8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6mm, Cu Pad: 645 mm2 ) Note: 1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.
6 mg (typ.
) Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss ton toff VDSF Test Conditions ID = −1 mA, VGS = 0 ID = −1 mA, VGS = +8 V VDS = −12 V, VGS = 0 VGS = ±...


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