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SSM3J113TU

Toshiba Semiconductor
Part Number SSM3J113TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 7, 2009
Detailed Description SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications • ...
Datasheet PDF File SSM3J113TU PDF File

SSM3J113TU
SSM3J113TU

Overview
SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications • 2.
0V drive • Low on-resistance: Ron = 449mΩ (max) (@VGS = −2.
0 V) Ron = 249mΩ (max) (@VGS = −2.
5 V) Ron = 169mΩ (max) (@VGS = −4.
0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS −20 V VGSS ± 12 V ID −1.
7 A IDP −3.
4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the T...


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