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SSM3J115TU

Toshiba Semiconductor
Part Number SSM3J115TU
Manufacturer Toshiba Semiconductor
Description Field-Effect Transistor Silicon P-Channel MOS Type
Published Jul 7, 2009
Detailed Description SSM3J115TU www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switc...
Datasheet PDF File SSM3J115TU PDF File

SSM3J115TU
SSM3J115TU

Overview
SSM3J115TU www.
DataSheet4U.
com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications • • 1.
5 V drive Low ON-resistance: Ron = 353 mΩ (max) (@VGS = −1.
5 V) Ron = 193 mΩ (max) (@VGS = −1.
8 V) Ron = 125 mΩ (max) (@VGS = −2.
5 V) Ron = 98 mΩ (max) (@VGS = −4.
0 V) 2.
0±0.
1 2.
1±0.
1 1.
7±0.
1 0.
65±0.
05 +0.
1 0.
3 -0.
05 3 0.
166±0.
05 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating −20 ±8 −2.
2 −4.
4 800 500 150 −55~150 Unit V V 1 2 mW °C °C Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
2 (25.
4 mm × 25.
4 mm × 0.
8 mm, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board.
2 (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm ) Note: 1: Gate 2: Source UFM 3: Drain JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.
6 mg (typ.
) Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ Test Conditions ID = −1 mA, VGS = 0 ID = −1 mA, VGS = +8 V VDS = −20 V, VGS = 0 VGS = ±8 V, VDS = 0 VDS = −3 V, ID = −1 mA VDS = −3 V, ID = − 0.
9 A ID = −1.
0 A, ...


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