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SSM3J117TU

Toshiba Semiconductor
Part Number SSM3J117TU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 7, 2009
Detailed Description SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU DC-DC converter Applications High-S...
Datasheet PDF File SSM3J117TU PDF File

SSM3J117TU
SSM3J117TU

Overview
SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU DC-DC converter Applications High-Speed Switching Applications • 4 V drive • Low ON-resistance: RDS(ON) = 225 mΩ (max) (@VGS = −4 V) RDS(ON) = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDS −30 V VGSS ±20 V ID −2 A IDP −4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Mounted on a ceramic board.
(25.
4 mm × 25.
4 mm × 0.
8 t, Cu Pad: 645 mm2 ) Mounted on an FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 645 mm2 ) Unit: mm 2.
1±0.
1 1.
7±0.
1 0.
3-+00.
.
015 1 2 3 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 1: Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.
6 mg (typ.
) Marking 3 JJ9 Equivalent Circuit (top view) 3 1 2 1 2 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge.
Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
Start of commercial production 2005-12 1 2015/01/20 Electrical Char...


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