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SSM3J16TE

Part Number	SSM3J16TE
Manufacturer	Toshiba Semiconductor
Description	Field-Effect Transistor Silicon P-Channel MOS Type
Published	Jul 7, 2009
Detailed Description	SSM3J16TE www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switchi...
Datasheet	SSM3J16TE PDF File

Overview

SSM3J16TE www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm • • Small package Low on-resistance : Ron = 8 Ω (max) (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.
5 V) : Ron = 45 Ω (max) (@VGS = −1.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating −20 ±10 −100 −200 100 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range 1: Gate 2: Source 3: Drain Note: JEDEC ― Using continuously under heavy loads (e.
g.
the a...

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