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SSM3J304T

Toshiba Semiconductor
Part Number SSM3J304T
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Jul 7, 2009
Detailed Description SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications...
Datasheet PDF File SSM3J304T PDF File

SSM3J304T
SSM3J304T

Overview
SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.
8-V drive • Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.
0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2.
3 A -4.
6 Power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of ...


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