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BUK9006-55A

NXP Semiconductors
Part Number BUK9006-55A
Manufacturer NXP Semiconductors
Description N-channel Enhancement mode field-effect power Transistor
Published Jul 7, 2009
Detailed Description com BUK9006-55A TrenchMOS™ logic level FET Rev. 01 — 1 August 2003 Preliminary data 1. Product profile ...
Datasheet PDF File BUK9006-55A PDF File

BUK9006-55A
BUK9006-55A

Overview
com BUK9006-55A TrenchMOS™ logic level FET Rev.
01 — 1 August 2003 Preliminary data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
Product availability: BUK9006-55A distributed as individual die on reel.
1.
2 Features s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection.
1.
3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching.
1.
4 Quick reference data s EDS(AL)S ≤ 1.
1 J s V(BR)DSS ≤ 55...


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