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CHDTA113ZEPT

Chenmko Enterprise
Part Number CHDTA113ZEPT
Manufacturer Chenmko Enterprise
Description Digital Silicon Transistor
Published Jul 9, 2009
Detailed Description www.DataSheet4U.com CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts APPLICATIO...
Datasheet PDF File CHDTA113ZEPT PDF File

CHDTA113ZEPT
CHDTA113ZEPT

Overview
www.
DataSheet4U.
com CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTA113ZEPT CURRENT 100 mAmpere FEATURE * Small surface mounting type.
(SC-75/SOT-416) * High current gain.
* Suitable for high packing density.
* * * * Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=1.
0kΩ, Typ.
) 0.
1 0.
2±0.
05 0.
5 1.
6±0.
2 0.
5 SC-75/SOT-416 (2) (3) 1.
0±0.
1 0.
1 0.
3±0.
05 (1) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package.
0.
1 0.
2±0.
05 0.
8±0.
1 MARKING ZE1 Gnd In 1 0.
15±0.
05 0.
1Min.
0.
6~0.
9 0~0.
1 1.
6±0.
2 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCC VIN IO DC Output current IC(Max.
) PTOT TSTG TJ RθJ-S Note 1.
Transistor mounted on an FR4 printed-circuit board.
2004-01 PARAMETER Supply voltage Input voltage CONDITIONS − MIN.
MAX.
-50 +5 -100 V V UNIT -10 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point − mA -100 150 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O www.
DataSheet4U.
com RATING CHARACTERISTIC ( CHDTA113ZEPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed.
SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IC=-5mA, VCE=-10.
0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.
0V IO=-20mA; VO=-0.
3V IO=-10mA; II=-0.
5mA VI=-5V VI=0V; VCC=-50V IO=-5.
0mA; VO=-5.
0V − − − − 33 0.
7 8 − MIN.
-0.
3 − − − − − − 1.
0 10 250 TYP.
− -3.
0 -0.
3 -7.
2 -0.
5 − 1.
3 12 − KΩ MHz MAX.
V V V mA uA UNIT Note 1.
Pulse test: tp≤300uS; δ≤0.
02.
www.
DataSheet4U.
com RATING CHARACTERIS...


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