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CHDTA114GKPT

Part Number	CHDTA114GKPT
Manufacturer	Chenmko Enterprise
Description	Digital Silicon Transistor
Published	Jul 9, 2009
Detailed Description	www.DataSheet4U.com CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLI...
Datasheet	CHDTA114GKPT PDF File

Overview

www.
DataSheet4U.
com CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTA114GKPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type.
(SOT-23) * High current gain.
* Suitable for high packing density.
* * * * Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=10kΩ, Typ.
) SOT-23 .
041 (1.
05) .
033 (0.
85) (1) .
110 (2.
80) .
082 (2.
10) .
066 (1.
70) .
119 (3.
04) (3) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package.
(2) .
055 (1.
40) .
047 (1.
20) .
103 (2.
64) .
086 (2.
20) .
028 (0.
70) .
020 (0.
50) .
007 (0.
177) .
018 (0.
30) .
002 (0.
05) Emitter Base 1 CIRCUIT 2 .
045 (1.
15) .
033 (0.
85) R1 TR .
019 (0.
50) 3 Collector Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System.
SYMBOL VCBO VCEO VEBO IC PC TSTG TJ RθJ-S Note 1.
Transistor mounted on an FR4 printed-circuit board.
2003-12 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb ≤ 25 OC, Note 1 200 150 −55 ∼ +150 junction - soldering point 140 mW O C O C C/W O www.
DataSheet4U.
com RATING CHARACTERISTIC ( CHDTA114GKPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed.
SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -720uA IC= -10mA; IB= -0.
5mA VCB= -50V VEB= -4V IC= -5mA; VCE= -5.
0V IE=5mA, VCE= -10.
0V f=100MHz = MIN.
-50.
0 -50.
0 -5.
0 − − − 30 ...

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CHDTA114GKPT Digital Silicon Transistor - Chenmko Enterprise

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