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MRF7S18125BHSR3

Part Number	MRF7S18125BHSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 16, 2009
Detailed Description	Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Fiel...
Datasheet	MRF7S18125BHSR3 PDF File

Overview

Freescale Semiconductor Technical Data www.
DataSheet4U.
com Document Number: MRF7S18125BH Rev.
0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulations.
GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz.
Power Gain — 16.
5 dB Drain Efficiency — 55% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg.
, Full Frequency Band (1930 - 1990 MHz).
Power Gain — 17 dB Drain Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = - 60 dBc Spectral Regrowth @ 600 kHz Offset = - 74 dBc EVM — 2.
6% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features • Characterized with Series Equivalent ...

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MRF7S18125BHSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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