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MRF7S19120NR1

Part Number	MRF7S19120NR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Jul 16, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 0, 9/2007 RF Power Field...
Datasheet	MRF7S19120NR1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev.
0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 18 dB Drain Effici...

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MRF7S19120NR1 RF Power Field Effect Transistor - Freescale Semiconductor

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