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MRF7S16150HSR3

Part Number	MRF7S16150HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 16, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Fiel...
Datasheet	MRF7S16150HSR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev.
1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz.
Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
• Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg.
, f = 1600 and 1660 MHz, 802.
16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 19.
7 dB Drain Efficiency — 25.
4% Device Output Signal PAR — 8.
2 dB @ 0.
01% Probability on CCDF ACPR @ 5.
2...

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MRF7S16150HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

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