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MRF5S19060NR1

Part Number	MRF5S19060NR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 16, 2009
Detailed Description	com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 6, 5/2006 RF Power Field...
Datasheet	MRF5S19060NR1 PDF File

Overview

com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev.
6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.
• Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg.
, Full Frequency Band.
IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CC...

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