DatasheetsPDF.com

SI4435BDY

Vishay Siliconix
Part Number SI4435BDY
Manufacturer Vishay Siliconix
Description P-Channel 30-V (D-S) MOSFET
Published Jul 18, 2009
Detailed Description Si4435BDY www.DataSheet4U.com Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A...
Datasheet PDF File SI4435BDY PDF File

SI4435BDY
SI4435BDY

Overview
Si4435BDY www.
DataSheet4U.
com Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −9.
1 −6.
9 rDS(on) (W) 0.
020 @ VGS = −10 V 0.
035 @ VGS = −4.
5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant Available APPLICATIONS D Load Switches D Battery Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4435BDY-T1 Si4435BDY-T1—E3 (Lead (Pb)-Free) 8 7 6 5 D D D D G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −9.
1 −7.
3 −50 −2.
1 2.
5 1.
6 −55 to 150 −7 −5.
6 A −1.
25 1.
5 0.
9 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72123 S-50694—Rev.
C, 18-Apr-05 www.
vishay.
com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 18 Maximum 50 85 22 Unit _C/W 1 Si4435BDY www.
DataSheet4U.
com Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 55_C VDS = −5 V, VGS = −10 V VGS = −10 V, ID = −9.
1 A VGS = −4.
5 V, ID = −6.
9 A VDS = −10 V, ID = −9.
1 A IS = −2.
1 A, VGS = 0 V −40 0.
015 0.
025 24 −0.
8 −1.
2 0.
020 0.
035 −1 −3 "100 −1 −25 V nA mA A W S V Symbol Test Condition...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)