DatasheetsPDF.com

SI4435DYPBF

International Rectifier
Part Number SI4435DYPBF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jul 18, 2009
Detailed Description www.DataSheet4U.com PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Sur...
Datasheet PDF File SI4435DYPBF PDF File

SI4435DYPBF
SI4435DYPBF

Overview
www.
DataSheet4U.
com PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S 1 8 A D D D D S S G 2 7 VDSS = -30V RDS(on) = 0.
020Ω 3 6 4 5 Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infrared, or wave soldering techniques.
Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)