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STX690A

ST Microelectronics
Part Number STX690A
Manufacturer ST Microelectronics
Description Transistors
Published Jul 18, 2009
Detailed Description www.DataSheet4U.com STX690A High performance low voltage NPN transistor Features ■ ■ ■ ■ Very low collector to emitter...
Datasheet PDF File STX690A PDF File

STX690A
STX690A

Overview
www.
DataSheet4U.
com STX690A High performance low voltage NPN transistor Features ■ ■ ■ ■ Very low collector to emitter saturation voltage DC current gain, hFE > 100 3 A continuous collector current 40 V breakdown voltage V(BR)CER Applications ■ ■ ■ ■ Power management in portable equipment Voltage regulation in bias supply circuits Switching regulator in battery charger applications Heavy load driver TO-92 TO-92AP Figure 1.
Internal schematic diagram Description The device is manufactured in low voltage NPN planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Table 1.
Device summary Marking X690A X690A Package TO-92 TO-92 AP Packaging Bulk Ammopack Order code STX690A STX690A-AP February 2009 Rev 1 1/10 www.
st.
com 10 www.
DataSheet4U.
com Electrical ratings STX690A 1 Electrical ratings Table 2.
Symbol VCBO VCER VCEO VEBO IC ICM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (R BE = 47 Ω) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max.
operating junction temperature Value 40 40 30 5 3 6 0.
9 -65 to 150 150 Unit V V V V A A W °C °C Table 3.
Symbol Rthj-amb Thermal data Parameter Thermal resistance junction-amb __max Value 139 Unit °C/W 2/10 www.
DataSheet4U.
com STX690A Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4.
Symbol ICBO Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 30 V VCB = 30 V; VEB = 4 V TC = 100 °C Min.
Typ.
Max.
10 100 10 Unit µA µA µA IEBO Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) V(BR)CER (1) IC = 10 mA 30 V Collector-emitter breakdown voltage (RBE = 47 Ω) Collector-base breakdown ...


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