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MRFE6S9135HR3

Freescale Semiconductor
Part Number MRFE6S9135HR3
Manufacturer Freescale Semiconductor
Description N-Channel Enhancement-Mode Lateral MOSFETs
Published Jul 29, 2009
Detailed Description www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Fiel...
Datasheet PDF File MRFE6S9135HR3 PDF File

MRFE6S9135HR3
MRFE6S9135HR3

Overview
www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev.
1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 39 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 21 dB Drain Efficiency — 32.
3% Device Output Signal PAR — 6.
4 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — - 39.
5 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanc...


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