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MRFE6S9200HR3

Motorola Semiconductor Products
Part Number MRFE6S9200HR3
Manufacturer Motorola Semiconductor Products
Description RF Power FET
Published Jul 29, 2009
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs ...
Datasheet PDF File MRFE6S9200HR3 PDF File

MRFE6S9200HR3
MRFE6S9200HR3

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg.
, f = 880 MHz, 3GPP Test Model 1, 64 DPCH with 45.
2% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 21 dB Drain Efficiency — 35% Device Output Signal PAR — 6.
36 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — - 40 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness.
Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9200H Rev.
1, 12/2008 MRFE6S9200HR3 MRFE6S9200HSR3 880 MHz, 58 W AVG.
, 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9200HR3 CASE 465C - 02, STYLE 1 NI - 880S MRFE6S9200HSR3 Table 1.
Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) VDSS - 0.
5, +66 Vdc VGS - 0.
5, +12 Vdc Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Table 2.
Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 200 W CW Case Temperature 79°C, 58 W CW RθJC 0.
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