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MSAGX60F60A

Microsemi Corporation
Part Number MSAGX60F60A
Manufacturer Microsemi Corporation
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 31, 2009
Detailed Description www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX6...
Datasheet PDF File MSAGX60F60A PDF File

MSAGX60F60A
MSAGX60F60A

Overview
www.
DataSheet4U.
com 2830 S.
Fairview St.
Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A 600 Volts 60 Amps 2.
9 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C...


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