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MSAGX75F60A

Part Number	MSAGX75F60A
Manufacturer	Microsemi Corporation
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published	Jul 31, 2009
Detailed Description	www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75F60A 600 Vo...
Datasheet	MSAGX75F60A PDF File

Overview

www.
DataSheet4U.
com 2830 S.
Fairview St.
Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75F60A 600 Volts 75 Amps 2.
7 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75F60B high frequency IGBT, low switching losses Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Ts...

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MSAGX75F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR - Microsemi Corporation

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