DatasheetsPDF.com

EIC1011-4

Excelics Semiconductor
Part Number EIC1011-4
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC1011-4 UPDATED 08/21/2007 10.70-11.70GHz 4-Watt Internally-Matched Power FET FEATURES • • • • ...
Datasheet PDF File EIC1011-4 PDF File

EIC1011-4
EIC1011-4

Overview
www.
DataSheet4U.
com EIC1011-4 UPDATED 08/21/2007 10.
70-11.
70GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 10.
70 –11.
70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.
0 dBm Output Power at 1dB Compression 6.
5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 25.
5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.
7-11.
7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 10.
7-11.
7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 10.
7-11.
7GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 10.
7-11.
7GHz VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression f = 10.
7-11.
7GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.
5 dBm S.
C.
L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 11.
70GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device.
MIN 35.
5 5.
5 TYP 36.
0 6.
5 ±0.
6 30 1100 -43 -46 2000 -2.
5 5.
5 2500 -4.
0 6.
0 o MAX UNITS dBm dB dB % 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1.
Tested with 100 Ohm gate resistor.
2.
S.
C.
L.
= Single Carrier Level.
3.
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.
6mA 35.
5dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.
4mA -2.
4mA @ 3dB Compression 175C -65C to +175C 25W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc.
310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)