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EIC7785-8

Excelics Semiconductor
Part Number EIC7785-8
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • ...
Datasheet PDF File EIC7785-8 PDF File

EIC7785-8
EIC7785-8

Overview
www.
DataSheet4U.
com EIC7785-8 UPDATED 08/21/2007 7.
70-8.
50GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 7.
70–8.
50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.
5 dBm Output Power at 1dB Compression 8.
5 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 28.
5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.
70-8.
50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 7.
70-8.
50GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 7.
70-8.
50GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 2200mA f = 7.
70-8.
50GHz Drain Current at 1dB Compression f = 7.
70-8.
50GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.
5 dBm S.
C.
L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 8.
50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Volta...


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