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KRF1302S

Guangdong Kexin Industrial
Part Number KRF1302S
Manufacturer Guangdong Kexin Industrial
Description HEXFET Power MOSFET
Published Aug 20, 2009
Detailed Description SMD Type HEXFET Power MOSFET KRF1302S TO-263 Features Advanced Process Technology Ultra Low On-Resistance + 0 .2 8 .7 -0...
Datasheet PDF File KRF1302S PDF File

KRF1302S
KRF1302S


Overview
SMD Type HEXFET Power MOSFET KRF1302S TO-263 Features Advanced Process Technology Ultra Low On-Resistance + 0 .
2 8 .
7 -0 .
2 + 0 .
1 1 .
2 7 -0 .
1 Transistors IC Unit: mm +0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2 Dynamic dv/dt Rating 175 Operating Temperature +0.
1 1.
27-0.
1 0.
1max +0.
1 0.
81-0.
1 Fast Switching + 0 .
2 5 .
2 8 -0 .
2 Repetitive Avalanche Allowed up to Tjmax 2.
54 +0.
2 -0.
2 +0.
1 5.
08-0.
1 + 0 .
2 2 .
5 4 -0 .
2 + 0 .
2 1 5 .
2 5 -0 .
2 2.
54 +0.
2 0.
4-0.
2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Junction-to-Case Junction-to-Ambient (PCB mount) R JC R JA VGS EAS IAR EAR dv/dt TJ,TSTG TBD -55 to + 175 300 0.
74 40 /W Symbol ID ID IDM PD Rating 174 120 700 200 1.
4 20 350 Fig.
1.
2 W W/ V mJ A mJ V/ns A Unit Fig1.
Unclamped Inductive Test Circuit Fig 2.
Unclamped Inductive Waveforms 5 .
6 0 11gate Gate 22drain Drain 33source Source www.
kexin.
com.
cn 1 SMD Type KRF1302S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Bo...



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