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RQA0002DNS

Renesas Technology
Part Number RQA0002DNS
Manufacturer Renesas Technology
Description Silicon N-Channel MOS FET
Published Aug 20, 2009
Detailed Description www.DataSheet4U.com RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0301 Rev.3.01 Nov 21, 2007 Features • High output ...
Datasheet PDF File RQA0002DNS PDF File

RQA0002DNS
RQA0002DNS

Overview
www.
DataSheet4U.
com RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0301 Rev.
3.
01 Nov 21, 2007 Features • High output power, High gain, High efficiency Pout = +39.
6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 MHz) • Small outline package (WSON0504-2: 5.
0 × 4.
0 × 0.
8 mm) Outline RENESAS Package code: PWSN0002ZA-B (Package name: HWSON-2 ) 3 3 2 1 1 2 3 1.
Gate 2.
Source 3.
Drain 1 2 Note: Marking is “RQA0002”.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID PchNote Tch Tstg Ratings 16 ±5 3.
8 15 150 –55 to +150 Unit V V A W °C °C This Device is sensitive to electro static discharge.
An Adequate careful handling procedure is requested.
REJ03G0583-0301 Rev.
3.
01 Nov 21, 2007 Page 1 of 17 RQA0002DNS www.
DataSheet4U.
com Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Output power Power added efficiency Output power Power added efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Pout PAE Min.
— — 0.
25 4.
0 — — — 38.
7 7.
41 60 — — — Typ — — 0.
4 4.
8 102 50 4.
5 39.
6 9.
12 68 35.
8 3.
8 60 Max.
20 ±3 0.
75 5.
8 — — — — — — — — — Unit µA µA V S pF pF pF dBm W % dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = ±5 V, VDS = 0 ID = 1mA, VDS = 7.
5 V VDS = 7.
5 V, ID = 2 A VGS = 5 V, VDS = 0, f = 1 MHz VDS = 7.
5 V, VGS = 0, f = 1 MHz VDG = 7.
5 V, VGS = 0, f = 1 MHz VDS = 7.
5 V, IDQ = 200 mA f = 520 MHz, Pin = +25 dBm (316 mW) VDS = 3.
6 V, IDQ = 200 mA f = 520 MHz, Pin = +25 dBm (316 mW) Main Characteristics Maximum Channel Power Dissipation Curve Typical Output Characteristics 4 2.
25 V 2.
0 V Pulse Test 1.
75 V 15 Pch (W) 20 Drain Current ID (A) Channel Power Dissipation 3 1.
5 V 2 10 5 1 1.
25 V VGS = 1.
0 V 0...


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