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RQA0003DNS

Renesas Technology
Part Number RQA0003DNS
Manufacturer Renesas Technology
Description Silicon N-Channel MOS FET
Published Aug 20, 2009
Detailed Description www.DataSheet4U.com RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0300 Rev.3.00 Oct 12, 2006 Features • High Output ...
Datasheet PDF File RQA0003DNS PDF File

RQA0003DNS
RQA0003DNS

Overview
www.
DataSheet4U.
com RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0300 Rev.
3.
00 Oct 12, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% (f = 520 MHz) • Small Outline Package (WSON0303-2: 3.
0 × 3.
0 × 0.
8mm) Outline RENESAS Package code: PWSN0002ZA-A (Package name: HWSON-2 ) 3 2 3 1 1 3 2 1.
Gate 2.
Source 3.
Drain 1 2 Note: Marking is “A0003”.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 2.
4 7 150 –55 to +150 Unit V V A W °C °C This Device is sensitive to Electro Static Discharge.
An Adequate careful handling procedure is requested.
Rev.
3.
00 Oct 12, 2006 page 1 of 12 RQA0003DNS www.
DataSheet4U.
com Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to sou...


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