DatasheetsPDF.com

RQA0008RXDQS

Part Number	RQA0008RXDQS
Manufacturer	Renesas Technology
Description	Silicon N-Channel MOS FET
Published	Aug 20, 2009
Detailed Description	www.DataSheet4U.com RQA0008RXDQS Silicon N-Channel MOS FET REJ03G1326-0100 Rev.1.00 Oct 16, 2006 Features • High Outpu...
Datasheet	RQA0008RXDQS PDF File

Overview

www.
DataSheet4U.
com RQA0008RXDQS Silicon N-Channel MOS FET REJ03G1326-0100 Rev.
1.
00 Oct 16, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A R ) (Package Name : UPAK 3 3 2 1 1 1.
Gate 2.
Source 3.
Drain 4.
Source 4 2, 4 Note: Marking is “RX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note1: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote1 Tch Tstg Ratings 16 ±5 2.
4 10 150 –55 to +150 Unit V V A W °C °C This Device is sensitive to Electro Static Discharge.
An Adequate careful handling procedure is requested.
Rev.
1.
00 Oct 16, 2006 page 1 of 12 RQA0008RXDQS www.
DataSheet4U.
com Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain...

Similar Datasheet

RQA0008RXDQS Silicon N-Channel MOS FET - Renesas Technology

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)