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TC55V400AFT-70

Toshiba Semiconductor
Part Number TC55V400AFT-70
Manufacturer Toshiba Semiconductor
Description 16-BIT FULL CMOS STATIC RAM
Published Aug 26, 2009
Detailed Description TC55V400AFT-55,-70 www.DataSheet4U.com TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BI...
Datasheet PDF File TC55V400AFT-70 PDF File

TC55V400AFT-70
TC55V400AFT-70

Overview
TC55V400AFT-55,-70 www.
DataSheet4U.
com TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.
3 to 3.
6 V power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 0.
5 mA standby current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low.
There are three control inputs.
CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access.
Data byte control pin ( LB , UB ) provides lower and upper byte access.
This device is well suited to various microprocessor system appli...


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