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TA36N30P

IXYS Corporation
Part Number TA36N30P
Manufacturer IXYS Corporation
Description IXTA36N30P
Published Aug 27, 2009
Detailed Description Advanced Technical Information www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 36N30P IXTA ...
Datasheet PDF File TA36N30P PDF File

TA36N30P
TA36N30P

Overview
Advanced Technical Information www.
DataSheet4U.
com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS(on) = = = 300 V 36 A 110 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A mJ J V/ns W °C °C °C °C °C G = Gate S = Source G S (TAB) D = Drain TAB = Drain G D S (TAB) G D S (TAB) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 36 90 36 30 1.
0 10 300 -55 .
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+150 150 -55 .
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+150 TO-220 (IXTP...


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