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EIC1213-8

Excelics Semiconductor
Part Number EIC1213-8
Manufacturer Excelics Semiconductor
Description 9.50-10.50 GHz 25-Watt Internally Matched Power FET
Published Aug 29, 2009
Detailed Description www.DataSheet4U.com EIC1213-8 ISSUED 3-19-09 12.75-13.25 GHz 8-Watt Internally Matched Power FET Excelics EIC1213-8 .8...
Datasheet PDF File EIC1213-8 PDF File

EIC1213-8
EIC1213-8


Overview
www.
DataSheet4U.
com EIC1213-8 ISSUED 3-19-09 12.
75-13.
25 GHz 8-Watt Internally Matched Power FET Excelics EIC1213-8 .
827±.
010 .
669 .
120 MIN FEATURES • • • • • • • 12.
75– 13.
25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39 dBm Output Power at 1dB Compression 6.
5 dB Power Gain at 1dB Compression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .
024 .
421 YYWW SN .
120 MIN .
125 .
508±.
008 .
442 .
168±.
010 ALL DIMENSIONS IN INCHES .
004 .
063 .
004 .
105±.
008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device.
SYMBOL P1dB G1dB ∆G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.
75-13.
25GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 12.
75-13.
25GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 12.
75-13.
25GHz VDS = 10 V, IDSQ ≈2200mA Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28.
0 dBm S.
C.
L VDS = 10 V, IDSQ ≈ 65% IDSS f = 13.
25 GHz Po...



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