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MRF6S20010GNR1

Part Number	MRF6S20010GNR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Aug 29, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field...
Datasheet	MRF6S20010GNR1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz.
Suitable for analog and digital modulation and multipurpose amplifier applications.
• Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain — 15.
5 dB Drain Efficiency — 36% IMD — - 34 dBc • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg.
, Full Frequency Band (2130 - 2170 MHz), Channel Bandwidth = 3.
84 MHz.
PAR = 8.
5 dB @ 0.
01% Probability Power Gain — 15.
5 dB Drain Efficiency — 15% IM3 @ 10 MHz Offset — - 47 dBc in 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 49 dBc in 3.
84 MHz Channel Bandwidth • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg.
, Full Freque...

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MRF6S20010GNR1 RF Power Field Effect Transistors - Freescale Semiconductor

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