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STL85N6F3

STMicroelectronics
Part Number STL85N6F3
Manufacturer STMicroelectronics
Description Power MOSFET
Published Aug 31, 2009
Detailed Description www.DataSheet4U.com STL85N6F3 N-channel 60 V, 0.005 Ω, 19 A PowerFLAT™ (6x5) STripFET™ Power MOSFET Preliminary Data F...
Datasheet PDF File STL85N6F3 PDF File

STL85N6F3
STL85N6F3

Overview
www.
DataSheet4U.
com STL85N6F3 N-channel 60 V, 0.
005 Ω, 19 A PowerFLAT™ (6x5) STripFET™ Power MOSFET Preliminary Data Features Type STL85N6F3 VDSS 60 V RDS(on) max < 0.
0057 Ω ID 19 A (1) 1.
The value is rated according Rthj-pcb ■ ■ Extremely low on-resistance RDS(on) 100% avalanche tested PowerFLAT™ (6x5) Application ■ Switching applications Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility.
The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.
Figure 1.
Internal schematic diagram Table 1.
Device summary Marking 85N6F3 Package PowerFLAT™ (6x5) Packaging Tape and reel Order code STL85N6F3 January 2009 Rev 1 1/10 www.
st.
com 10 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
www.
DataSheet4U.
com Contents STL85N6F3 Contents 1 2 3 4 5 Electrical ratings .
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3 Electrical characteristics .
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4 Test circuit .
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6 Package mechanical data .
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7 Revision history .
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9 2/10 www.
DataSheet4U.
com STL85N6F3 Electrical ratings 1 Electrical ratings Table 2.
Symbol VDS VGS ID(1) ID (1) IDM ID (2) (3) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Drain current (continuous) at TC=25°C Drain current (continuous...


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