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2SD1141

Inchange Semiconductor
Part Number 2SD1141
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Sep 22, 2009
Detailed Description isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·...
Datasheet PDF File 2SD1141 PDF File

2SD1141
2SD1141

Overview
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1141 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1141 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN IC= 30mA; L= 10mH, PW= 50μ VCEO(SUS) Collector-Emitter Sustaining Voltage s; 300 f= 50Hz V(BR)CBO Collector-Base Breakdown Voltage IC= 0.
1mA; IE= 0 400 TYP.
MAX UNIT V V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 1.
5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.
0 V ICEO Collector Cutoff Current VCE= 300V; RBE= ∞ 100 μA hFE DC Current Gain IC= 4A; VCE= 2V 500 Switching times ton Turn-on Time toff Turn-Off Time IC= 4A, IB1= IB2= 40mA 2.
0 μs 23 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace i...


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