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2SD1670

Part Number	2SD1670
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V...
Datasheet	2SD1670 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000( Min.
) @ IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Collector Power Dis...

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