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2SD864

Part Number	2SD864
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD864 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Col...
Datasheet	2SD864 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD864 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.
5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC= 1.
5A ·Complement to Type 2SB765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissip...

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