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2SD897

Inchange Semiconductor
Part Number 2SD897
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Sep 22, 2009
Detailed Description isc Silicon NPN Power Transistor 2SD897 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed...
Datasheet PDF File 2SD897 PDF File

2SD897
2SD897

Overview
isc Silicon NPN Power Transistor 2SD897 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.
0V(Max.
)@ IC= 1A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 1.
5 A ICM Collector Current- Peak 5.
0 A IB Base Current- Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Ju...


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