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2SC3462

Inchange Semiconductor
Part Number 2SC3462
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Sep 22, 2009
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wid...
Datasheet PDF File 2SC3462 PDF File

2SC3462
2SC3462

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.
5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3462 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO VCEO(SUS) V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage IC= 5mA; RBE= ∞ IC= 2A; IB1= -IB2= 0.
4A; L= 2mH; clamped IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.
4A ICBO Collector Cutoff Current VCB= 800V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.
3A; VCE= 5V hFE-2 DC Current Gain IC= 1.
5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.
0MHz fT Current-Gain—Bandwidth Product IC= 0.
3A; VCE= 10V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A , IB1= 0.
6A; IB2= -1.
2A RL= 133Ω; VCC=400V 2SC3462 MIN TYP.
MAX UNIT 800 V 800 V 1100 V 7 V 2.
0 V 1.
5 V 10 μA 10 μA 10 40 8 90 pF 15 MHz 0.
5 μs 3.
0 μs 0.
3 μs  hFE-1 Classifications K L M 10-20 15-30 20-40 Notice： ISC reserves the rights to make changes of the content herein the datasheet at...


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