DatasheetsPDF.com

2SC3563

Part Number	2SC3563
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Sw...
Datasheet	2SC3563 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 40 W 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperatur...

Similar Datasheet

2SC3500 Silicon Power Transistor - ETC
2SC3501 Silicon Power Transistor - ETC
2SC3502 PNP/NPN Transistors - Sanyo Semicon Device
2SC3502 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC3502 Silicon NPN Power Transistor - Inchange Semiconductor
2SC3503 PNP/NPN Transistors - Sanyo Semicon Device
2SC3503 NPN Epitaxial Silicon Transistor - Fairchild Semiconductor
2SC3504 NPN Transistor - Sanyo Semicon Device
2SC3505 SILICON POWER TRANSISTOR - SavantIC
2SC3505 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)