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AS4DDR32M16

Part Number	AS4DDR32M16
Manufacturer	Austin Semiconductor
Description	8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS
Published	Sep 26, 2009
Detailed Description	Austin Semiconductor, Inc. 8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit FEATURES ...
Datasheet	AS4DDR32M16 PDF File

Overview

Austin Semiconductor, Inc.
8 Meg x 16 x 4 Banks Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit FEATURES • VDD = +2.
5V ±0.
2V, VDDQ = +2.
5V ±0.
2V • Bidirectional data strobe (DQS) transmitted/received with data, i.
e.
, source-synchronous data capture (has two – one per byte) • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; center-aligned with data for WRITEs • DLL to align DQ and DQS transitions with CK • Four internal banks for concurrent operation • Data mask (DM) for masking write data (has two–one per byte) •...

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