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IRFS4615PBF

Part Number	IRFS4615PBF
Manufacturer	International Rectifier
Description	N-Channel HEXFET Power MOSFET
Published	Sep 26, 2009
Detailed Description	PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMP...
Datasheet	IRFS4615PBF PDF File

Overview

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ.
max.
ID D 150V 34.
5m: 42m: 33A D S G G D S D2Pak IRFS4615PbF TO-262 IRFSL4615PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Max.
33 24 140 144 0.
96 ± 20 38 -55 to + 175 300 Units A W W/°C V V/ns IDM www.
DataSheet4U.
com Pulsed Drain Current c e °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy c d c i 109 See Fig.
14, 15, 22a, 22b, mJ A mJ Thermal Resistance Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) j Parameter Typ.
––– ––– Max.
1.
045 40 Units °C/W www.
irf.
com 1 12/18/08 IRFS/SL4615PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Min.
Typ.
Max.
Units 150 ––– ––– 3.
0 ––– ––– ––– ––– ––– Conditions ––– 0.
19 34.
5 ––– ––– ––– ––– ––– 2.
7 ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 5mA 42 mΩ VGS = 10V, ID = 21A 5.
0 V VDS =...

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IRFS4615PBF N-Channel HEXFET Power MOSFET - International Rectifier

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